| PART |
Description |
Maker |
| BR93L46-W BR93L46F-W BR93L46FJ-W BR93L46FV-W BR93L |
Microwire BUS 1Kbit(64 x 16bit) EEPROM
|
Rohm
|
| BR93L56RFJ-W BR93L56RFV-W BR93L56RFVJ-W |
Microwire BUS 2Kbit(128 x 16bit) EEPROM
|
Rohm
|
| BR93L56RF-W BR93L56F-W BR93L56-W BR93L56FV-W BR93L |
Microwire BUS 2Kbit(128 x 16bit) EEPROM
|
ROHM[Rohm]
|
| M66307FP M66307SP M66307E |
From old datasheet system
LINE SCAN BUFFER with 16BIT MPU BUS COMPATIBLE LINE SCAN BUFFER with 16-BIT MPU BUS COMPATIBLE INPUTS
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AK4550VT AKM4550 AKD4550 AK4550 AK4550VTP-E2 AK535 |
Enchanced dual bit 20 bit ADC
SPECIALTY CONSUMER CIRCUIT, PDSO16
JT 41C 41#20 PIN PLUG
LOW POWER & SMALL PACKAGE 16BIT CODEC
Low Power & Samll Package 16bit ## CODEC
LOW POWER & SMALL PACKAGE 16BIT CODEC
|
Asahi Kasei Microsystems Co.,Ltd
AKM[Asahi Kasei Microsystems]
Asahi Kasei Microsystem...
|
| KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| AKD4550-E |
16bit A/D and D/A converter
|
Asahi Kasei Microsystems
|
| BR93L46-W BR93L46FJ-WE2 BR93L46FV-WE2 BR93L86-W BR |
Microwire BUS 1Kbit(64x16bit) EEPROM
Microwire BUS 16Kbit(1024x16bit) EEPROM
Microwire BUS 8Kbit(512x16bit) EEPROM
Microwire BUS 4Kbit(256x16bit) EEPROM
Microwire BUS 2Kbit(128x16bit) EEPROM
|
ROHM
|
| TB62706BFG TB62706BNG |
16BIT SHIFT REGISTER
|
Toshiba
|
| K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
